Material-Driven Solutions for Next-Gen Semiconductor Integration
As demand grows for high-performance computing (HPC), AI, and edge devices, advanced packaging technologies such as 2.5D, 3D, and high-density fan-out are becoming essential to deliver increased processing power, functionality, and bandwidth. However, these architectures introduce significant manufacturing and reliability pain points, especially as packages become larger, thinner, and more densely integrated.
Warpage, die shift, and cracking are among the most critical challenges faced during assembly—driven by material mismatches, thermal stress, and tighter design tolerances. Left unaddressed, these issues can lead to lower yield, costly rework, and compromised device reliability.
In this technical webinar, Henkel will explore the evolving material requirements for heterogeneous integration, with a focus on solutions that proactively mitigate package-level stress, warpage, and thermal buildup.
We will showcase our latest innovations in:
High Thermal Capillary Underfill (HT-CUF): Tailored resin-filler systems that combine high fracture toughness, low CTE, and enhanced thermal conductivity for void-free, crack-resistant performance in fine-pitch and large-die applications.- Liquid Molded Underfill (LMUF): Designed for ultra-thin gaps and high bump count assemblies, LMUF delivers superior gap filling with minimal warpage, enabling reliability in wafer-level and 3D stacking formats.
- Liquid Compression Molding (LCM): For fan-out and panel-level processes, Henkel’s low-shrinkage LCM technology significantly reduces post-mold warpage while maintaining structural integrity on larger substrates.
With proven performance in both wafer and panel-level applications, Henkel’s portfolio empowers customers to overcome packaging challenges, enhance yield, and accelerate scalable integration.
Join us to discover how smart materials engineering is addressing today’s most pressing packaging pain points—and paving the way for tomorrow’s advanced semiconductor designs.
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